Chemists, engineers achieve world record with high-speed graphene transistors

Researchers have developed a new fabrication process for high-speed graphene transistors using a nanowire as the self-aligned gate. This new technique does not produce any appreciable defects in the graphene during fabrication, so the carrier mobility is retained. Also, by using a self-aligned approach with a nanowire as the gate, the group was able to overcome alignment difficulties previously encountered and fabricate short channel devices with unprecedented performance.